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EC103D1
Sensitive gate thyristor
Rev. 01 -- 1 November 2001
M3D186
Product data
1. Description
Very sensitive gate thyristor intended to be interfaced directly to low power gate trigger circuits, with very low drive current capability. Product availability: EC103D1 in SOT54 (TO-92).
2. Features
s s s s Blocking voltage to 400 V On-state RMS current to 0.8 A Ultra low gate trigger current Low cost package.
3. Applications
s Earth leakage circuit breakers s Solid state relays s General purpose switching.
4. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT54 (TO-92), simplified outline and symbol Description anode (a)
1 1 2 3 2 3
MSB033 MBL308
Simplified outline
Symbol
gate (g) cathode (k)
SOT54 (TO-92)
Philips Semiconductors
EC103D1
Sensitive gate thyristor
5. Quick reference data
Table 2: VDRM VRRM IT(RMS) ITSM Quick reference data Conditions 25 C Tj 125 C Typ Max 400 400 0.8 8.0 Unit V V A A repetitive peak off-state voltage repetitive peak reverse voltage on-state current (RMS value) non-repetitive peak on-state current Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM VRRM IT(AV) IT(RMS) ITSM repetitive peak off-state voltage repetitive peak reverse voltage average on-state current on-state current (RMS value) non-repetitive peak on-state current half sine wave; Tlead 83 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing t = 10 ms ITM = 2.0 A; IG = 10 mA; dIG/dt = 100 mA/s rate of rise on-state current peak gate current peak gate voltage peak reverse gate voltage peak gate power average gate power storage temperature operating junction temperature over any 20 ms period -40 8.0 9.0 0.32 50 1.0 5.0 5.0 2.0 0.1 +150 +125 A A A2s A/s V V W W C C Conditions 25 C Tj 125 C Min Max 400 400 0.5 0.8 Unit V V A A
9397 750 08574
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
2 of 11
Philips Semiconductors
EC103D1
Sensitive gate thyristor
0.6 Ptot (W) = 120 = 90 0.4 = 60 = 30
003aaa111
003aaa110
10 ITSM (A) 8
= 180
6
4 0.2 2 0
0 0.2 0.4
0 IT(AV) (A)
0.6
1
10
102
n
103
= conduction angle
n = number of cycles at f = 50 Hz
Fig 1. Maximum on-state dissipation as a function of average on-state current; typical values.
Fig 2. Maximum permissible non-repetitive peak on-state current as a function of number of cycles for sinusoidal currents; typical values.
1.0 IT(RMS) (A) 0.8
003aaa116
2.0 IT(RMS) (A) 1.5
003aaa117
0.6 1.0 0.4
0.2
0.5
0 -50 0 50 100 150 Tlead (C)
0 10-2
10-1
1
tsurge (s)
10
f = 50 Hz; Tlead 83C.
Fig 3. Maximum permissible on-state current (RMS value) as a function of lead temperature; typical values.
Fig 4. Maximum permissible repetitive on-state current (RMS value) as a function of surge duration for sinusoidal currents; typical values.
9397 750 08574
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
3 of 11
Philips Semiconductors
EC103D1
Sensitive gate thyristor
7. Thermal characteristics
Table 4: Symbol Rth(j-lead) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to lead thermal resistance from junction to ambient mounted on a printed circuit board; lead length = 4 mm Conditions Value 80 150 Unit K/W K/W
7.1 Transient thermal impedance
102 Zth(j-lead) (K/W)
003aaa108
10
PD t 10 2
tp 1 10-4 10-3 10-2 10-1 1 10 t p (s)
Fig 5. Transient thermal impedance from junction to lead as a function of pulse duration.
9397 750 08574
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
4 of 11
Philips Semiconductors
EC103D1
Sensitive gate thyristor
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol IGT IL IH VT VGT Parameter gate trigger current latching current holding current on-state voltage gate trigger voltage IT = 1.0 A IT = 10 mA; gate open circuit VD = 12 V VD = VDRM (max); Tj = 125 C ID IR dVD/dt tgt tq off-state current reverse current rate of rise of off-state voltage gate controlled turn-on time commutated turn-off time VD = VDRM (max); VR = VRRM (max); Tj = 125 C; RGK = 1 k VD = 0.67 VDRM(max); Tcase = 125 C; exponential waveform; RGK = 1 k ITM = 2.0 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A /s VD = 0.67 VDRM(max); Tj = 125 C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A /s; dVD/dt = 2 V/s; RGK = 1 k 0.2 0.5 0.3 50 50 25 2 100 0.8 100 100 V V A A V/s s s Conditions VD = 12 V; IT = 0.1 A; gate open circuit VD = 12 V; IGT = 0.5 mA; RGK = 1 k Min Typ 3 2 2 1.2 Max 12 6 5 1.35 Unit A mA mA V Static characteristics
Dynamic characteristics
9397 750 08574
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
5 of 11
Philips Semiconductors
EC103D1
Sensitive gate thyristor
3.0 IT (A) 125 C max 2.0 125 C typ
003aaa109
2.0 a 1.6
003aaa114
1.2
0.8 1.0 25 C typ 0.4
0 0.4
0 0.8 1.2 VT (V) 1.6 -50 0 50 100 Tj (C) 150
I L ( Tj ) a = ----------------I
L ( 25 C )
Fig 6. On-state current as a function of on-state voltage; typical and maximum values.
Fig 7. Normalized latching current as a function of junction temperature; typical values.
1.6 a
003aaa112
003aaa113
2.0 a 1.6
1.2 1.2
0.8 0.8 0.4
0.4 -50
0 0 50 100 Tj ( C) 150 -50 0 50 100 Tj ( C) 150
V GT ( Tj ) a = ----------------------V
GT ( 25 C )
I GT ( Tj ) a = --------------------I
GT ( 25 C )
Fig 8. Normalized gate trigger voltage as a function of junction temperature; typical values.
Fig 9. Normalized gate trigger current as a function of junction temperature; typical values.
9397 750 08574
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
6 of 11
Philips Semiconductors
EC103D1
Sensitive gate thyristor
9. Package outline
Plastic single-ended leaded (through hole) package; 3 leads SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28
Fig 10. SOT54 (TO-92).
9397 750 08574 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
7 of 11
Philips Semiconductors
EC103D1
Sensitive gate thyristor
10. Revision history
Table 6: 01 Revision history CPCN Description Product data; initial version
Rev Date 20011101
9397 750 08574
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
8 of 11
Philips Semiconductors
EC103D1
Sensitive gate thyristor
11. Data sheet status
Data sheet status[1] Objective data Preliminary data Product status[2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Product data
Production
[1] [2]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
9397 750 08574
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
9 of 11
Philips Semiconductors
EC103D1
Sensitive gate thyristor
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 08574
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 1 November 2001
10 of 11
Philips Semiconductors
EC103D1
Sensitive gate thyristor
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Transient thermal impedance . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
(c) Koninklijke Philips Electronics N.V. 2001. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 1 November 2001 Document order number: 9397 750 08574

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